Technische Information / technical information
IGBT-Module IGBT-modules
FS100R17KE3
&'( ) *+, &. ) +, &. ) *+,
IGBT-Wechselrichter / IGBT-inverter
! " # 3 ! " @ # $ " % % " $ % % $ % ! " 3, : ? ? % %
Vorlaufige Daten preliminary data
-./0 4. 567 4. 12 1 18* 9 9 9 *** CD E <8* J<8 -
Hochstzulassige Werte / maximum rated values
;)1
< &. )
+,
4.=> :A6A -B/0
&. ) *+,
Charakteristische Werte / characteristic values
! ? % ? % 4 #% " $ # @ % % % ? % %" %" # @ F F $F % % % % % 4. ) 1 4. ) 1 4. ) 8< 9< -B/ ) 1* -< &'( ) *+, 9< -B/ ) 1* -< &'( ) 1 *+, 9< -./ ) -B/< &'( ) *+, C1* -./ GHA -B/AI KB BM5A ,MPG ,TPG 4./0 4B/0 Y 65 <2 <8 <8 <* L, N R R
-B/ ) 1* &'( ) *+, )1 )1
O < &'( ) *+,< -./ ) * -< -B/ ) O < &'( ) *+,< -./ ) * -< -B/ ) -< -B/ ) -< &'( ) *+,
S "@ " ! ? % # " #
-./ ) 12 "% % U % U V W V W % U U W W -./ )
*< 8
9 9 L L L L L L L L [ [ [ [ 9
-< -B/ )
-< &'( ) *+,
4. ) 1 9< -./ ) Q -B/ ) X1* -< B65 ) 8< N< &'( ) *+, -B/ ) X1* -< B65 ) 8< N< &'( ) 1 *+, 4. ) 1 9< -./ ) Q -B/ ) X1* -< B65 ) 8< N< &'( ) *+, -B/ ) X1* -< B65 ) 8< N< &'( ) 1 *+,
9
% U
U
"
T
9
%
V W
W
4. ) 1 9< -./ ) Q -B/ ) X1* -< B6ZZ ) 8< N< &'( ) *+, -B/ ) X1* -< B6ZZ ) 8< N< &'( ) 1 *+, 4. ) 1 9< -./ ) Q -B/ ) X1* -< B6ZZ ) 8< N< &'( ) *+, -B/ ) X1* -< B6ZZ ) 8< N< &'( ) 1 *+,
Y 6ZZ
R
U U
"
V
W W % :
Z
# % 9 % ! $, 4 \ F @ <
4. ) 1 9< -./ ) Q -< V0 ) O -B/ ) X1* -< B65 ) 8< N< &'( ) *+, -B/ ) X1* -< B65 ) 8< N< &'( ) 1 *+, 4. ) 1 9< -./ ) Q -< V0 ) O -B/ ) X1* -< B6ZZ ) 8< N< &'( ) *+, -B/ ) X1* -< B6ZZ ) 8< N< &'( ) 1 *+, ; ] 1 L < -B/ ] 1* &'(]1 *+,< -.. ) 1 -< -./7H^ ) -./0 VG./ _ D 4?a& 4?a&
#65
%
:
#6ZZ 40. AIb.
<
* !D
1
Technische Information / technical information
IGBT-Module IGBT-modules
FS100R17KE3
&'( ) *+,
Diode-Wechselrichter / diode-inverter
: 3 3, : ? 4d % @ $ " % @ ;)1 -= ) -< ; ) 1 $ " % %
Vorlaufige Daten preliminary data
-==> 4c 4c=> 12 1 9 9 1 E 9d
Hochstzulassige Werte / maximum rated values
< &'( ) 1 *+,
4d
Charakteristische Werte / characteristic values
3 @ S" " $ % % 9 % : % @ < % % % % 4c ) 1 4c ) 1 9< -B/ ) 9< -B/ ) -< &'( ) *+, -< &'( ) 1 *+, -c 1< 1
9 9 L, L, [ [
KT
#TPe AIb.
4
F
!D
NTC-Widerstand / NTC-thermistor
f 9@ @ a a @ % ijj % ijj &. ) 1
Charakteristische Werte / characteristic values
&. ) *+, +,< ijj ) 8Q N gh kD :gh aghnhj 2* * *< *
E "N l
&. ) *+, g ) gh E maghnhjU1D&g 1DU Q < 1*!WWo
< !
2
Technische Information / technical information
IGBT-Module IGBT-modules
FS100R17KE3
$< ) * O < ) 1
Modul / module
4 :S % % S ! % V -% " ! "% % % " F < F %@ , < O E & V% % 9 ?@ @% % % | a % % $ D @ * F %$ $ @ % < &. ) *+,< $ D @ @ " v;HGAP ) 1 @% E % " 4 ! ! ! ! " " " " !S " ! "D !S " ! "D D D " " %
Vorlaufige Daten preliminary data
-p0qr <8 , 9g s 1< 1< 2<* 2<* ,&4 t * E "-
u
D DU _!W D vwTPHGP ) 1 DU _!W
AI.x VG./
< 1
Q
!D O
9
S
..yz//y
1<
N
&'( 7H^ &'( 6{ &GAw 8 8 < ?
1* 1* 1* J<
+, +, +, f %
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This technical information specifies semiconductor devices but guarantees no characteristics. It is valid with the appropriate technical explanations.
3
Technische Information / technical information
IGBT-Module IGBT-modules
FS100R17KE3
W W 4. ) U-./W &'( ) 1 *+, 9 % %"
Vorlaufige Daten preliminary data
4?a& 4?a& U U W W
9
%
%"
4?a& 4?a&
U U
4. ) U-./W -B/ ) 1* -
200 180 160 140 120
4. m9o 4. m9o
&'( ) *+, &'( ) 1 *+,
200 180 160 140 120 100 80 60 40 20 0,0 0,5
%
-B/ ) -B/ ) 1*-B/ ) 1 -B/ ) 1 -B/ ) Q-B/ ) -
100 80 60 40 20 0 1,0
"
1,5
-./ m-o
2,0
2,5
3,0
U W
3,5
W
4,0
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
-./ m-o U U W W -< &'(
u
%
" 4?a& 4?a&
U
4. ) U-B/W -./ ) -
$ 4?a& @ % 4?a& #65 ) U4.W< #6ZZ ) U4.W -B/ ) X1* -< B65 ) 8 N< ) 1 *+,
B6ZZ ) 8 N< -./ ) Q
200 180 160 140 120 100 80 60 40 20 0 5 6 7 8 9 10 11 12 13
# m [o 4. m9o
&'( ) *+, &'( ) 1 *+,
100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200
#65 #6ZZ
-B/ m-o
4. m9o
4
Technische Information / technical information
IGBT-Module IGBT-modules
FS100R17KE3
W W }AIb. ) U W &
Vorlaufige Daten preliminary data
F @ 4?a& 4?a&
$ 4?a& U @ % 4?a& 4 U #65 ) U BW< #6ZZ ) U BW -B/ ) X1* -< 4. ) 1 9< -./ ) Q
-< &'( ) 1 *+,
100
#65 #6ZZ
1
}AIb. 4?a&
80 0,1
}AIb. m!D o
60
# m [o
40
0,01
20
1 Mm!D o Mm o < * <1 < J2* <8 0
0
5
S "@F
10
9
15
20
B mNo
25
30
35
40
3
0,001 0,001
\" @ 4c ) U-cW
0,01
3
0,1
mo U U
1
W W
10
$
% 4. ) U-./W -B/ ) X1* -<
4?a& 4?a&
U a$~9W U a$~9W
B6ZZ ) 8 N< &'( ) 1 *+,
250 225 200 175 150
4. m9o 4c m9o
200 180 160 140 120 100 80 60 40
4.< 4.< , &'( ) *+, &'( ) 1 *+,
125 100 75 50 25 0 0
20 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0
200 400 600 800 1000 1200 1400 1600 1800
-./ m-o
-c m-o
5
Technische Information / technical information
IGBT-Module IGBT-modules
FS100R17KE3
W W
Vorlaufige Daten preliminary data
U U -< &'( ) 1 *+, W W
$ 3 @ % #TPe ) U4cW B65 ) 8 N< -./ ) Q
U U -< &'( ) 1 *+,
$ 3 @ % #TPe ) U BW 4c ) 1 9< -./ ) Q
40 35 30 25
# m [o
#TPe
45 40 35 30
# m [o
#TPe
20 15 10 5 0 0 20 40 60 80 100 120 140 160 180 200
4c m9o 3 F @
25 20 15 10 5 0 0 5 10 15 20 25 30 35 40
B mNo
& }AIb. ) U W
1
}AIb. 3
}AIb. m!D o
0,1
1 Mm!D o Mm o 8 <2 <
0,01 0,001
0,01
0,1
mo
1
10
6
Technische Information / technical information
IGBT-Module IGBT-modules
FS100R17KE3
Schaltplan / circuit diagram
Vorlaufige Daten preliminary data
Gehauseabmessungen / package outlines
7
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